The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC's, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
IEEE Journal of the Electron Devices Society（J-EDS）是一份开放存取、全电子化的科学期刊，发表从基础到应用研究的论文，这些论文在科学上是严谨的，并与电子器件相关。J-EDS出版了有关电子和离子集成电路器件和互连的理论、建模、设计、性能和可靠性的原创性和重要贡献，涉及绝缘体、金属、有机材料、微等离子体、半导体、量子效应结构、真空器件和新兴材料，应用于生物电子学、生物医学电子学、计算、通信、显示、微机电、成像、微致动器、纳米器件、光电子、光伏、功率IC和微传感器。还出版了关于这些主题的辅导和评论论文。此外，偶尔也会出版关于特定领域更深入和更广泛的论文集的特刊。J-EDS出版所有被认为是技术上有效和原创的论文。
Design of Power- and Variability-Aware Nonvolatile RRAM Cell Using Memristor as a Memory Element
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2928830
Improving the Scalability of SOI-Based Tunnel FETs Using Ground Plane in Buried Oxide
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2907314
Impact of the Stacking Order of HfOx and AlOx Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2915975
Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2915097
Investigation of $I-V$ Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2902653
Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2923204
Hybrid Systems-in-Foil—Combining the Merits of Thin Chips and of Large-Area Electronics
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2896188
A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2916399
Controlling the Surface Properties of an Inkjet-Printed Reactive Oxygen Species Scavenger for Flexible Bioelectronics Applications in Neural Resilience
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2910748
A Complete Small-Signal MOSFET Model and Parameter Extraction Technique for Millimeter Wave Applications
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2900202
Accurate Graphene-Metal Junction Characterization
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2891516
Leading-Edge Thin-Layer MOSFET Potential Modeling Toward Short-Channel Effect Suppression and Device Optimization
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2948648
Compact Charge Modeling of Double-Gate MOSFETs Considering the Density-Gradient Equation
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2903854
Investigation of the Scalability of Emerging Nanotube Junctionless FETs Using an Intrinsic Pocket
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2935319
A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2946383
TCAD Analysis of the Four-Terminal Poly-Si TFTs on Suppression Mechanisms of the DC and AC Hot-Carrier Degradation
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2916619
A Capacitive Information-Based Force-Voltage Responsivity Stabilization Method for Piezoelectric Touch Panels
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2939912
InGaAs FinFETs 3-D Sequentially Integrated on FDSOI Si CMOS With Record Performance
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2928471
Skyrmion-Induced Memristive Magnetic Tunnel Junction for Ternary Neural Network
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2913637
A 4410-ppi Resolution Pixel Circuit for High Luminance Uniformity of OLEDoS Microdisplays
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2935766
Thermal Analysis of Ultimately-Thinned-and-Transfer-Bonded CMOS on Mechanically Flexible Foils
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2939884
Ultra-High-Image-Density, Large-Size Organic Light-Emitting Device Panels Based on Highly Reliable Gate Driver Circuits Integrated by Using InGaZnO Thin-Film Transistors
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2947557
IGZO TFT Gate Driver Circuit With Improved Output Pulse
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2018.2884920
Design and Test of the In-Array Build-In Self-Test Scheme for the Embedded RRAM Array
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2931757
A Novel p-LDMOS Additionally Conducting Electrons by Control ICs
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2930630
Simulation-Based Model of Randomly Distributed Large-Area Field Electron Emitters
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2940086
Processing-Structure-Protrusion Relationship of 3-D Cu TSVs: Control at the Atomic Scale
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2947246
A Compensation Method for Variations in Subthreshold Slope and Threshold Voltage of Thin-Film Transistors for AMOLED Displays
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2904852
Endurance and Retention Degradation of Intermediate Levels in Filamentary Analog RRAM
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2943017
A Method for Obtaining the Real Off-State Breakdown Voltage of AlGaN/GaN MIS-HEMTs in On-Wafer Tests by Optimizing Protective Layer
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2935323
A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2947695
A Low-Power Thin-Film Si Heterojunction FET Noise Amplifier for Generation of True Random Numbers
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2902183
High Current Output Hydrogenated Diamond Triple-Gate MOSFETs
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2915250
Heterogeneous System Level Integration Using Active Si Interposer
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2940619
A Feasibility Study on Ferroelectric Shadow SRAMs Based on Variability-Aware Design Optimization
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2949564
Investigation of 5-nm-Thick Hf0.5Zr0.5O2 Ferroelectric FinFET Dimensions for Sub-60-mV/Decade Subthreshold Slope
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2942381
Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2937142
High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2919424
Fabrication and Characterization of Stacked Poly-Si Nanosheet With Gate-All-Around and Multi-Gate Junctionless Field Effect Transistors
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2952150
Test System for Thin Film Transistor Parameter Extraction in Active Matrix Backplanes
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2922000
Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2897167
Foreword Special Section on Flexible Electronics From the Selected Extended Papers Presented at 2018 IFETC
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2932214
Evaluation of Bulk and SOI FeFET Architecture for Non-Volatile Memory Applications
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2906834
Multi-Level Memory Comprising Only Amorphous Oxide Thin Film Transistors
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2914931
Monitoring of FinFET Characteristics Using $\\Delta V_{\\text{DIBLSS}}/(I_{\\text{on}}/I_{\\text{off}})$ and $\\Delta V_{\\text{DIBL}}/(I_{\\text{on}}/I_{\\text{off}})$
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2898697
Near-Linear Potentiation Mechanism of Gated Schottky Diode as a Synaptic Device
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2898674
Phase Change Memory Cell With Reconfigured Electrode for Lower RESET Voltage
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2948254
Single-Crystalline Si-CMOS Circuit Fabrication on Polyethylene Terephthalate Substrate by Meniscus Force-Mediated Layer Transfer
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2920631
Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2920024
Optimization of Zn2SiO4 Anode Structure for Deep Ultraviolet Generation With Carbon Nanotube Emitters
来源期刊：IEEE Journal of the Electron Devices SocietyDOI：10.1109/JEDS.2019.2931015
