Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
先进电子材料是一个跨学科的论坛，为同行评审，高质量，高影响力的研究领域的材料科学，物理和工程的电子和磁性材料。除了基础研究外，它还包括电子和磁性材料的物理和物理性质、自旋电子学、电子学、器件物理和工程、微机电系统和纳米机电系统以及有机电子学的研究。
Dual‐Functional Graphene Composites for Electromagnetic Shielding and Thermal Management
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800558
The Thermoelectric Properties of Bismuth Telluride
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800904
The Recent Advance in Fiber‐Shaped Energy Storage Devices
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800456
Poly(3,4‐ethylenedioxythiophene): Chemical Synthesis, Transport Properties, and Thermoelectric Devices
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800918
Mechanisms for enhanced state retention and stability in redox-gated organic neuromorphic devices
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800686
Dimensionality Dependent Plasticity in Halide Perovskite Artificial Synapses for Neuromorphic Computing
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201900008
Sub 10 nm Bilayer Bi2O2Se Transistors
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800720
Conjugated Polymer Blends for Organic Thermoelectrics
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800821
Room-Temperature Ferromagnetism in MoTe 2 by Post-Growth Incorporation of Vanadium Impurities
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201900044
Modulating Electrical Performances of In2O3 Nanofiber Channel Thin Film Transistors via Sr Doping
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800707
Impact of the Gate Dielectric on Contact Resistance in High‐Mobility Organic Transistors
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800723
Recent Advances in Black Phosphorus‐Based Electronic Devices
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800666
Dual-Gate Organic Field-Effect Transistor for pH Sensors with Tunable Sensitivity
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800381
Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201900393
Solvent Engineering for High‐Performance n‐Type Organic Electrochemical Transistors
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201900249
Large-Area All-Printed Temperature Sensing Surfaces Using Novel Composite Thermistor Materials
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800605
Recent Advances in n‐Type Thermoelectric Nanocomposites
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800943
Tuning Ni/Al Ratio to Enhance Pseudocapacitive Charge Storage Properties of Nickel–Aluminum Layered Double Hydroxide
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201900215
2D Material‐Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800745
High‐Performance Organic Thermoelectric Materials: Theoretical Insights and Computational Design
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800882
Design of Mixed‐Cation Tri‐Layered Pb‐Free Halide Perovskites for Optoelectronic Applications
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201900234
Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT‐Gated Black Phosphorus Transistor
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201900458
The Vacancy‐Induced Electronic Structure of the SrTiO3−δ Surface
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800460
Photovoltaic-Pyroelectric-Piezoelectric Coupled Effect Induced Electricity for Self-Powered Coupled Sensing
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201900195
Reversible Modification of Ferromagnetism through Electrically Controlled Morphology
来源期刊：Advanced electronic materialsDOI：10.1002/aelm.201900150
Light‐Emitting Transistors Based on Solution‐Processed Heterostructures of Self‐Organized Multiple‐Quantum‐Well Perovskite and Metal‐Oxide Semiconductors
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800985
Ultrabroadband, Large Sensitivity Position Sensitivity Detector Based on a Bi2Te2.7Se0.3/Si Heterojunction and Its Performance Improvement by Pyro‐Phototronic Effect
来源期刊：Advanced electronic materialsDOI：10.1002/aelm.201900786
Probing the Electronic Properties of Monolayer MoS2 via Interaction with Molecular Hydrogen
来源期刊：Advanced electronic materialsDOI：10.1002/aelm.201800591
Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800407
Spin-Momentum Locking in the Gate Tunable Topological Insulator BiSbTeSe2 in Non-Local Transport Measurements
来源期刊：Advanced electronic materialsDOI：10.1002/aelm.201900334
Magnetoresistance and Spinterface of Organic Spin Valves Based on Diketopyrrolopyrrole Polymers
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201900318
The Effect of Electrostatic Interaction on n‐Type Doping Efficiency of Fullerene Derivatives
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800959
Development of VO2‐Nanoparticle‐Based Metal–Insulator Transition Electronic Ink
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800949
Near‐Infrared Photoresponse of Waveguide‐Integrated Carbon Nanotube–Silicon Junctions
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800265
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy
来源期刊：Advanced electronic materialsDOI：10.1002/aelm.201901171
EGOFET Gated by a Molecular Electronic Switch: A Single‐Device Memory Cell
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800875
Investigation of the Eightwise Switching Mechanism and Its Suppression in SrTiO3 Modulated by Humidity and Interchanged Top and Bottom Platinum and LaNiO3 Electrode Contacts
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800566
Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS2
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800863
Flexible Asymmetric Microsupercapacitors from Freestanding Hollow Nickel Microfiber Electrodes
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800584
In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VOx Asymmetric Crossbars
来源期刊：Advanced electronic materialsDOI：10.1002/aelm.201900605
Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800711
Nonsaturating Magnetoresistance and Nontrivial Band Topology of Type-II Weyl Semimetal NbIrTe4
来源期刊：Advanced electronic materialsDOI：10.1002/aelm.201900250
Tailoring the Local Conductivity of TiO2 by X‐Ray Nanobeam Irradiation
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201900129
Directed Assembly of Nanoparticle Threshold Selector Arrays
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201900098
Perspectives of Unicolored Phosphor‐Sensitized Fluorescence
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201900646
Nonvolatile Electric‐Field Control of Ferromagnetic Resonance and Spin Pumping in Pt/YIG at Room Temperature
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800663
Constructing Metal Arch Nanobridges Utilizing a Photothermal‐Induced Nanobonding Technique
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800807
Hole Conduction of Tungsten Diselenide Crystalline Transistors by Niobium Dopant
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800695
Solution‐Processed InAs Nanowire Transistors as Microwave Switches
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800323
Efficient Activation of Nanomechanical Resonators
来源期刊：Advanced electronic materialsDOI：10.1002/AELM.201800356
