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SOLID-STATE ELECTRONICS

SOLID-STATE ELECTRONICS

SOLID STATE ELECTRON
影响因子：1.4
是否综述期刊：否
是否预警：不在预警名单内
是否OA：否
出版国家/地区：UNITED STATES
出版社：Elsevier Ltd
发刊时间：1960
发刊频率：Monthly
收录数据库：SCIE/Scopus收录
ISSN：0038-1101

期刊介绍

It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
这是本杂志的目的是汇集在一个出版物的优秀论文报告新的和原创的工作在以下领域：（1）固体物理学和技术在电子学和光电子学中的应用，包括理论和器件设计;（2）器件的光学、电学、形态学表征技术和参数提取;（3）半导体器件的制造，以及器件相关材料的生长、测量和评价;（4）亚微米和纳米级微电子和光电子器件的物理学和建模，包括加工、测量和性能评估;（5）数值方法在固态器件和工艺的建模和模拟中的应用;以及（6）基于半导体和替代电子材料的纳米级电子和光电子器件、光伏器件、传感器和MEMS;（7）新型器件材料的合成和电光性能。
年发文量 112
国人发稿量 20.88
国人发文占比 0.19%
自引率 -
平均录取率0
平均审稿周期 一般,3-6周平均9.2周
版面费 US$2410
偏重研究方向 物理-工程：电子与电气
期刊官网 http://www.elsevier.com/wps/find/journaldescription.cws_home/103/description
投稿链接 http://ees.elsevier.com/sse/

期刊高被引文献

Two-pulse sub-ns switching scheme for advanced spin-orbit torque MRAM
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.03.010
A flexible characterization methodology of RRAM: Application to the modeling of the conductivity changes as synaptic weight updates
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.03.035
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2018.11.006
NanoElectronics Roadmap for Europe: From Nanodevices and Innovative Materials to System Integration
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.03.014
Feasibility of plasmonic circuits for on-chip interconnects
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.03.066
Degradation and failure mechanism of AlGaN-based UVC-LEDs
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.01.004
Exploiting topological matter for Majorana physics and devices
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.03.005
Impact of threshold voltage extraction methods on semiconductor device variability
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.03.055
Hardware implementation of neural network using pre-programmed resistive device for pattern recognition
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2018.12.018
Bias-stress effects in diF-TES-ADT field-effect transistors
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2018.12.014
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Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.03.027
A smart noise- and RTN-removal method for parameter extraction of CMOS aging compact models
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.03.045
Investigation of Mo:Na and Mo related back contacts for the application in Cu(In,Ga)Se2 thin film solar cells
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.04.002
Multifactor lithographic process conditions of 3D single mode waveguide fabrication
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2018.12.004
Investigation of the electromechanical stability of low temperature polycrystalline silicon thin-film transistors governed by types of stress
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.05.012
Island diodes triggering SCR in waffle layout with high failure current for HV ESD protection
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2018.11.001
Quantum modeling of threshold voltage in Ge dual material gate (DMG) FinFET
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.03.047
Experimental analysis and improvement of the DC method for self-heating estimation
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.03.056
Modeling of MEMS microwave integrated detector applied to 8–12 GHz receiver
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.107626
Low temperature influence on performance and transport of Ω-gate p-type SiGe-on-insulator nanowire MOSFETs
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.03.041
Experimental validation of the surface state distribution model in the Suzuki theory to qualify the thin film surface materials
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.02.002
An algorithm to design floating field rings in SiC and Si power diodes and MOSFETs
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.03.025
Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2018.11.003
Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.01.003
Analysis and optimization of the switching noise for Super-junction MOSFET in full bridge converter system
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.107638
Silicon-based high-integration reconfigurable dipole with SPiN
来源期刊：Solid-state ElectronicsDOI：10.1016/J.SSE.2019.02.005

质量指标占比

研究类文章占比 OA被引用占比 撤稿占比 出版后修正文章占比
100.00%13.49%-0.63%

相关指数

影响因子
影响因子
年发文量
自引率
Cite Score

预警情况

查看说明
时间 预警情况
2025年03月发布的2025版不在预警名单中
2024年02月发布的2024版不在预警名单中
2023年01月发布的2023版不在预警名单中
2021年12月发布的2021版不在预警名单中
2020年12月发布的2020版不在预警名单中
*来源：中科院《 国际期刊预警名单》

JCR分区

WOS分区等级：Q4区
版本 按学科 分区
WOS期刊SCI分区
WOS期刊SCI分区
WOS期刊SCI分区是指SCI官方（Web of Science）为每个学科内的期刊按照IF数值排 序，将期刊按照四等分的方法划分的Q1-Q4等级，Q1代表质量最高，即常说的1区期刊。
（2024-2025年最新版）
ENGINEERING, ELECTRICAL & ELECTRONIC
Q4

中科院分区

查看说明
版本 大类学科 小类学科 Top期刊 综述期刊
2025年3月最新升级版
物理与天体物理4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
4区
PHYSICS, APPLIED 物理：应用
4区
PHYSICS, CONDENSED MATTER 物理：凝聚态物理
4区
否
否
2023年12月升级版
物理与天体物理4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
4区
PHYSICS, APPLIED 物理：应用
4区
PHYSICS, CONDENSED MATTER 物理：凝聚态物理
4区
否
否
2022年12月旧的升级版
物理与天体物理3区
PHYSICS, CONDENSED MATTER 物理：凝聚态物理
3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
4区
PHYSICS, APPLIED 物理：应用
4区
否
否