Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
出版前苏联国家半导体研究方面最重要的著作。涵盖半导体理论、半导体中的传输现象、光学、磁光学和半导体的光电学、半导体激光器和半导体表面物理学。这本杂志有一个广泛的书评部分。
Hydrogen Desorption from Pentagraphane
来源期刊：SemiconductorsDOI：10.1134/S106378261905021X
Microstructure and Optical Bandgap of Cobalt Selenide Nanofilms
来源期刊：SemiconductorsDOI：10.1134/s1063782619130074
Power Conversion Efficiencies of Perovskite and Dye-Sensitized Solar Cells under Various Solar Radiation Intensities
来源期刊：SemiconductorsDOI：10.1134/S1063782619040213
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties
来源期刊：SemiconductorsDOI：10.1134/S1063782619080189
Formation of Porous Silicon by Nanopowder Sintering
来源期刊：SemiconductorsDOI：10.1134/S1063782619040031
Features of the Properties of Rare-Earth Semiconductors
来源期刊：SemiconductorsDOI：10.1134/S106378261902012X
The Effect of Crystallization Conditions on the Spectral Characteristics of Tetraphenylporphyrin Thin Films
来源期刊：SemiconductorsDOI：10.1134/S1063782619010056
Excitonic Effects and Impurity–Defect Emission in GaAs/AlGaAs Structures Used for the Production of Mid-IR Photodetectors
来源期刊：SemiconductorsDOI：10.1134/s1063782619160139
Low-Temperature Annealing of Lightly Doped n -4 H -SiC Layers after Irradiation with Fast Electrons
来源期刊：SemiconductorsDOI：10.1134/S1063782619070133
Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium
来源期刊：SemiconductorsDOI：10.1134/S1063782619010020
High-Efficiency Thermoelectric Single-Photon Detector Based on Lanthanum and Cerium Hexaborides
来源期刊：SemiconductorsDOI：10.1134/S1063782619050130
Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes
来源期刊：SemiconductorsDOI：10.1134/S1063782619040080
Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements
来源期刊：SemiconductorsDOI：10.1134/S1063782619010081
Kinetics of Photoluminescence Decay of Colloidal Quantum Dots: Reversible Trapping of Photogenerated Charge Carriers
来源期刊：SemiconductorsDOI：10.1134/s1063782619120078
Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy
来源期刊：SemiconductorsDOI：10.1134/S1063782619070224
Ab Initio Study of Absorption Resonance Correlations between Nanotubes and Nanoribbons of Graphene and Hexagonal Boron Nitride
来源期刊：SemiconductorsDOI：10.1134/s1063782619140161
Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions
来源期刊：SemiconductorsDOI：10.1134/S1063782619020234
Computational and Experimental Simulation of Static Memory Cells of Submicron Microcircuits under the Effect of Neutron Fluxes
来源期刊：SemiconductorsDOI：10.1134/s1063782619090173
The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy
来源期刊：SemiconductorsDOI：10.1134/S1063782619040092
Galvanomagnetic Properties of Cobalt Monosilicide and Alloys Based on It
来源期刊：SemiconductorsDOI：10.1134/S1063782619060149
New Direction in the Application of Thermoelectric Energy Converters
来源期刊：SemiconductorsDOI：10.1134/S1063782619070066
Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions
来源期刊：SemiconductorsDOI：10.1134/s1063782619110058
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs
来源期刊：SemiconductorsDOI：10.1134/s1063782619160140
The Cavity-Effect in Site-Controlled GaN Nanocolumns with InGaN Insertions
来源期刊：SemiconductorsDOI：10.1134/s1063782619120121
Laser Annealing of Thin ITO Films on Flexible Organic Substrates
来源期刊：SemiconductorsDOI：10.1134/S1063782619020192
Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies
来源期刊：SemiconductorsDOI：10.1134/S1063782619040043
Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions
来源期刊：SemiconductorsDOI：10.1134/s1063782619110046
Decomposition of a Solid Solution of Interstitial Magnesium in Silicon
来源期刊：SemiconductorsDOI：10.1134/S1063782619030175
Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation
来源期刊：SemiconductorsDOI：10.1134/S106378261906006X
Electronic States in Cylindrical Core-Multi-Shell Nanowire
来源期刊：SemiconductorsDOI：10.1134/S1063782619120236
Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers
来源期刊：SemiconductorsDOI：10.1134/s106378261910004x
Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion
来源期刊：SemiconductorsDOI：10.1134/s1063782619090094
Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation
来源期刊：SemiconductorsDOI：10.1134/s1063782619090288
Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two Dimensional Electron Gas
来源期刊：SemiconductorsDOI：10.1134/S1063782619040146
Influence of the Sintering Temperature on the Thermoelectric Properties of the Bi1.9Gd0.1Te3 Compound
来源期刊：SemiconductorsDOI：10.1134/S1063782619050300
Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation
来源期刊：SemiconductorsDOI：10.1134/S106378261906023X
On the Structure and Thermoelectric Properties of CoSi Obtained from a Supersaturated Solution–Melt in Sn
来源期刊：SemiconductorsDOI：10.1134/S1063782619060253
Simulation of Thermoelectric Materials Densification during Spark Plasma Sintering with the Example of Ge–Si
来源期刊：SemiconductorsDOI：10.1134/S1063782619060289
Dimensionless Mathematical Model of a Thermoelectric Cooler: ΔTmax Mode
来源期刊：SemiconductorsDOI：10.1134/S1063782619050178
Vertical Field-Effect Transistor with a Controlling GaAs-Based p – n Junction
来源期刊：SemiconductorsDOI：10.1134/s1063782619100245
Emission of Light from Compositionally Graded CdSSe/CdS Heterostructure with Smooth Near-surface Excitonic Potential
来源期刊：SemiconductorsDOI：10.1134/s1063782619120108
Urbach Rule in MnGa2Se4 Single Crystals Upon Optical Absorption
来源期刊：SemiconductorsDOI：10.1134/S1063782619060137
Thermoelectric Properties of In0.2Ce0.1Co4Sb12.3 Ribbons Prepared by the Rapid-Quenching Technique
来源期刊：SemiconductorsDOI：10.1134/S1063782619050208
Electronic and Optical Properties of Perovskite Quantum-Dot Dimer
来源期刊：SemiconductorsDOI：10.1134/s1063782619120303
Increase of the Zero-Phonon-Line Emission from Color Centers in Nanodiamonds by Coupling with Dielectric Nanocavity
来源期刊：SemiconductorsDOI：10.1134/s1063782619140197
The Thermopower and Electron Mobility in Monophase Monocrystalline SmS in a Wide Temperature Range
来源期刊：SemiconductorsDOI：10.1134/s1063782619130165
High-Voltage Diffused Step Recovery Diodes: I. Numerical Simulation
来源期刊：SemiconductorsDOI：10.1134/S1063782619070145
Influence of Annealing in Freon on the Crystalline Structure of Cadmium-Telluride Layers and the Efficiency of Thin-Film Solar Cells on Their Basis
来源期刊：SemiconductorsDOI：10.1134/S1063782619010111
Dependence of the Bulk Electrical Properties of Multisilicon on the Grain Misorientation Parameters
来源期刊：SemiconductorsDOI：10.1134/S1063782619010160
Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors
来源期刊：SemiconductorsDOI：10.1134/s1063782619100178
