Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
微电子可靠性，致力于传播微电子器件、电路和系统可靠性的最新研究成果和相关信息，从材料、工艺和制造到设计、测试和操作。该杂志的内容包括以下主题：测量、理解和分析;评价和预测;建模和模拟;方法和缓解。将可靠性与微电子工程的其他重要领域（如设计、制造、集成、测试和现场操作）相结合的论文也将受到欢迎，特别鼓励报告该领域和特定应用领域案例研究的实用论文。大多数被接受的论文将作为研究论文发表，描述重大进展和已完成的工作。评论重要的发展中的共同关心的主题的论文可以作为评论论文发表。较初步性质的紧急通信和关于当前感兴趣的已完成实际工作的简短报告可考虑作为研究说明出版。所有稿件均需经过该领域顶尖专家的同行评审。
Effect of PCB cracks on thermal cycling reliability of passive microelectronic components with single-grained solder joints
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2019.01.006
Impact of device aging in the compact electro-thermal modeling of SiC power MOSFETs
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.06.028
Effect of pulse-reverse plating on copper: Thermal mechanical properties and microstructure relationship
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2019.04.004
Optimization of an Artificial Neural Network System for the Prediction of Failure Analysis Success
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2018.11.014
Cache lifetime enhancement technique using hybrid cache-replacement-policy
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2019.03.011
Dual-Core Lockstep enhanced with redundant multithread support and control-flow error detection
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113447
Low delay Single Error Correction and Double Adjacent Error Correction (SEC-DAEC) codes
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2019.03.012
Characterization of the onset of carrier multiplication in power devices by a collimated radioactive alpha source
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.06.035
Fretting wear and reliability assessment of gold-plated electrical connectors
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.06.040
Adaptive dc-link voltage control strategy to increase PV inverter lifetime
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113439
Variability of metal/h-BN/metal memristors grown via chemical vapor deposition on different materials
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2019.113410
Evolution of microstructure of Lead free cu/Sn solders and copper oxide phase precipitation in Cu3Sn intermetallic during thermal cycling
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2018.11.005
Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113418
Vibration lifetime estimation of PBGA solder joints using Steinberg model
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2019.113474
A mission profile-based reliability analysis framework for photovoltaic DC-DC converters
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.06.075
Implementation of a new thermal path within the structure of inorganic encapsulated power modules
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113430
In-Operando X-ray diffraction imaging of thermal strains in fully packaged silicon devices
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2019.06.006
Thermomigration in Co/SnAg/Co and Cu/SnAg/Co sandwich structure
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2019.03.005
Fault ride-through capability of star-connected cascaded multilevel converter based hybrid energy storage system under unbalanced grid failure
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.06.012
A radiation-hardened Sense-Switch pFLASH cell for FPGA
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113514
Reliability analysis of sintered Cu joints for SiC power devices under thermal shock condition
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113456
Numerical simulation of harmful gas distribution in a range hood with an improved flow channel
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2019.06.021
Void formation in solder joints under power cycling conditions and its effect on reliability
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.06.042
Degradation modeling for reliability estimation of DC film capacitors subject to humidity acceleration
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113401
Topology and design investigation on thin film silicon BIMOS device for ESD protection in FD-SOI technology
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.06.069
A study on the reliability of equipment system through case-study on the manufacture of machinery/electronic equipment using practical QRM (quality, reliability, maintenance) process and evaluation index
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113411
Reliability evaluation of a 0.25 μm SiGe technology for space applications
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113480
Analysis of Schottky emission electric charge transport mechanism in Cu-Lu2O3-Cu MIM structure by temperature dependent current-voltage characteristics
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2019.113409
Degradation of bipolar transistors at high doses obtained at elevated temperature applied during gamma-irradiation
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.06.070
Optical design and study of a wireless IV drip detection device
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2019.06.017
Modelling and simulation of SEU in bulk Si and Ge SRAM
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.06.082
On the cumulative distribution function of the defect centric model for BTI reliability
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2018.12.003
Effects of total ionizing dose on single event effect sensitivity of FRAMs
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2019.02.010
Instantaneous Mean-Time-To-Failure (MTTF)estimation for checkpoint interval computation at run time
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2019.04.009
Contrast of latch-up induced by pulsed gamma rays in CMOS circuits after neutron irradiation and TID accumulation
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2019.04.015
Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113464
Temperature dependence of TDDB at high frequency in 28FDSOI
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113422
Fatigue reliability design for metal dual inline packages under random vibration based on response surface method
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113404
Long term accelerated ageing of an ASIC dedicated to cryptographic application
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113442
Mitigation of potential-induced degradation (PID) based on anti-reflection coating (ARC) structures of PERC solar cells
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113462
LVI-based failure analysis after PRBS defect activation: Two cases study
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.06.079
High-resolution cross-sectional analysis of the interface between SiC and SiO2 in a MOSFET device via atomic resolution STEM
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.06.058
Trap induced negative differential conductance and back-gated charge redistribution in AlGaN/GaN power devices
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113495
Characterization of positive bias temperature instability concerning interfacial layer thickness of HfSiON/SiO2 nMOSFET
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113444
Controllable micrometer positioning design of piezoelectric actuators using a robust fuzzy eliminator
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113497
Heavy ion irradiation induced hard error in MTJ of the MRAM memory array
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.06.039
Double tricrystal nucleation behavior in Pb-free BGA solder joints
来源期刊：Microelectronics ReliabilityDOI：10.1016/J.MICROREL.2019.04.021
Reliability analysis of the optimized Y-source inverter with clamping circuit
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113420
Gate mapping impact on variability robustness in FinFET technology
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113448
Optical gain in laser diodes with null reflectivity
来源期刊：Microelectronics ReliabilityDOI：10.1016/j.microrel.2019.113455
