MICROELECTRONICS INTERNATIONAL

MICROELECTRONICS INTERNATIONAL

MICROELECTRON INT
影响因子:0.8
是否综述期刊:
是否预警:不在预警名单内
是否OA:
出版国家/地区:ENGLAND
出版社:Emerald Group Publishing Ltd.
发刊时间:1982
发刊频率:Tri-annual
收录数据库:SCIE/Scopus收录
ISSN:1356-5362

期刊介绍

Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details.Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are:• Advanced packaging• Ceramics• Chip attachment• Chip on board (COB)• Chip scale packaging• Flexible substrates• MEMS• Micro-circuit technology• Microelectronic materials• Multichip modules (MCMs)• Organic/polymer electronics• Printed electronics• Semiconductor technology• Solid state sensors• Thermal management• Thick/thin film technology• Wafer scale processing.
微电子国际提供了一个权威的、国际性的和独立的论坛,对与先进封装、微电路工程、互连、半导体技术和系统工程有关的研究与开发、应用、工艺和当前实践进行批判性评估和传播。它是一个最新、全面和实用的信息工具。编辑John Atkinson博士欢迎向期刊投稿,包括技术论文、研究论文、案例研究和评论论文。微电子国际是一个多学科的研究领域,研究与微型电子器件和先进封装的设计、制造、组装和各种应用相关的关键技术和相关问题。涵盖的广泛主题包括:·先进封装·陶瓷·芯片连接·板上芯片(COB)·芯片级封装·柔性基板· MEMS·微电路技术·微电子材料·多芯片模块(MCM)·有机/聚合物电子学·印刷电子学·半导体技术·固态传感器·热管理·厚/薄膜技术·晶圆级加工。
年发文量 6
国人发稿量 3.2
国人发文占比 0.53%
自引率 -
平均录取率0
平均审稿周期 >12周,或约稿
版面费 US$3370
偏重研究方向 工程技术-材料科学:综合
期刊官网 https://www.emerald.com/insight/publication/issn/1356-5362
投稿链接 https://mc.manuscriptcentral.com/miij

期刊高被引文献

Design of microfluidic experimental setup for the detection of heavy metal ions using piezoresistive BioMEMS sensor
来源期刊:Microelectronics InternationalDOI:10.1108/mi-05-2019-0025
Effects of Y2O3-LaF3 on the low temperature sintering and thermal conductivity of AlN ceramics
来源期刊:Microelectronics InternationalDOI:10.1108/MI-03-2018-0016
Characterization of embedded membrane in corrugated silicon microphones for high-frequency resonance applications
来源期刊:Microelectronics InternationalDOI:10.1108/mi-02-2019-0010
Impact of process parameters on printing resolution and dielectric properties of LTCC substrate
来源期刊:Microelectronics InternationalDOI:10.1108/MI-12-2018-0083
Effective approach of microprocessor throughput enhancement
来源期刊:Microelectronics InternationalDOI:10.1108/MI-04-2018-0025
Study of lamination quality of solar modules with PMMA front layer
来源期刊:Microelectronics InternationalDOI:10.1108/MI-12-2018-0087
Evaluation of fan-out wafer level package strength
来源期刊:Microelectronics InternationalDOI:10.1108/MI-06-2018-0040
Aging effect in dye-sensitized solar cells sealed with thermoplastic films
来源期刊:Microelectronics InternationalDOI:10.1108/MI-11-2018-0075
Design, fabrication and characterization of LTCC micro-hotplates for gas-sensing application
来源期刊:Microelectronics InternationalDOI:10.1108/mi-06-2019-0035
Sol-gel-derived gallium nitride thin films for ultraviolet photodetection
来源期刊:Microelectronics InternationalDOI:10.1108/MI-12-2017-0074
A MEMS BPSK to ASK converter
来源期刊:Microelectronics InternationalDOI:10.1108/MI-06-2018-0039
Stress analysis of shielding electrode in chip with pressure sensor embedded in accelerometer
来源期刊:Microelectronics InternationalDOI:10.1108/MI-10-2017-0056
Disposable, acetylcholinesterase-coated, screen-printed carbon electrodes for the determination of organophosphorus pesticides
来源期刊:Microelectronics InternationalDOI:10.1108/MI-12-2018-0084
Influence of AlN etching process on MISFET structures
来源期刊:Microelectronics InternationalDOI:10.1108/MI-12-2018-0081
Current-voltage curves of eutectic In-Sb-Te thin films for phase change memory devices
来源期刊:Microelectronics InternationalDOI:10.1108/MI-01-2019-0007
Selective metallization of silicon and ceramic substrates
来源期刊:Microelectronics InternationalDOI:10.1108/MI-01-2019-0006
Silver nano platelet films on soft micro grating surface
来源期刊:Microelectronics InternationalDOI:10.1108/MI-07-2018-0044
In depth study of lead frame tape residuein quad flat non-leaded package
来源期刊:Microelectronics InternationalDOI:10.1108/mi-12-2018-0077
The impact of ribbon treatment on the interconnection of solar cells withina glass free PV module
来源期刊:Microelectronics InternationalDOI:10.1108/MI-11-2018-0076
Model of phosphorus diffusion in silicon for highly doped solar cell emitter layer
来源期刊:Microelectronics InternationalDOI:10.1108/MI-12-2018-0079
Eutectic Sb7.4Te92.6 thin film for non-volatile phase-change memories
来源期刊:Microelectronics InternationalDOI:10.1108/MI-03-2019-0016
Crystal orientation dependence of alternating current photo-assisted (ACPEC) porous silicon for potential optoelectronic application
来源期刊:Microelectronics InternationalDOI:10.1108/mi-08-2019-0052
Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions
来源期刊:Microelectronics InternationalDOI:10.1108/MI-09-2018-0057
Recent advances and applications of abrasive processes for microelectronics fabrications
来源期刊:Microelectronics InternationalDOI:10.1108/mi-05-2019-0024
Dielectrophoresis velocities response on tapered electrode profile: simulation and experimental
来源期刊:Microelectronics InternationalDOI:10.1108/MI-06-2018-0037
Fabrication and characterization of n-ZnO/p-GaSb heterojunction diode
来源期刊:Microelectronics InternationalDOI:10.1108/mi-01-2019-0002
Implementation of phosphor sedimentation to reduce thermal instability issue affecting white LED luminescence
来源期刊:Microelectronics InternationalDOI:10.1108/mi-04-2019-0020
Observation of the enhanced tunnel current of NiO thin films in grain boundary by peakforce TUNA
来源期刊:Microelectronics InternationalDOI:10.1108/MI-02-2019-0008
The influence of emitter resistance on the electrical parameters of mono- and multicrystalline silicon solar cells
来源期刊:Microelectronics InternationalDOI:10.1108/MI-04-2019-0019

质量指标占比

研究类文章占比 OA被引用占比 撤稿占比 出版后修正文章占比
100.00%2.94%--

相关指数

影响因子
影响因子
年发文量
自引率
Cite Score

预警情况

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时间 预警情况
2025年03月发布的2025版不在预警名单中
2024年02月发布的2024版不在预警名单中
2023年01月发布的2023版不在预警名单中
2021年12月发布的2021版不在预警名单中
2020年12月发布的2020版不在预警名单中
*来源:中科院《 国际期刊预警名单》

JCR分区

WOS分区等级:Q4区
版本 按学科 分区
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WOS期刊SCI分区
WOS期刊SCI分区是指SCI官方(Web of Science)为每个学科内的期刊按照IF数值排 序,将期刊按照四等分的方法划分的Q1-Q4等级,Q1代表质量最高,即常说的1区期刊。
(2024-2025年最新版)
ENGINEERING, ELECTRICAL & ELECTRONIC
Q4

中科院分区

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版本 大类学科 小类学科 Top期刊 综述期刊
2025年3月最新升级版
工程技术4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气
4区
MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学:综合
4区
2023年12月升级版
工程技术4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气
4区
MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学:综合
4区
2022年12月旧的升级版
工程技术4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气
4区