Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
半导体加工中的材料科学提供了一个独特的论坛，讨论功能材料和器件的新工艺、应用和理论研究，为（光）电子、传感器、探测器、生物技术和绿色能源。每期的目的是提供目前的见解、新的成就、突破和未来的发展趋势等不同领域的快照，如微电子、能源转换和储存、通信，生物技术、（光）催化、纳米和薄膜技术、混合和复合材料、化学加工、气相沉积、器件制造和建模，这些都是先进半导体加工和应用的支柱。内容包括：用于亚微米器件的先进光刻技术;蚀刻和相关主题;离子注入;损伤演变及相关问题;等离子体和热CVD;快速热处理;先进的金属化和互连方案;薄介电层、氧化;溶胶-凝胶处理;化学浴和（电）化学沉积;化合物半导体加工;新型非氧化物材料及其应用;（大）分子和杂化材料;分子动力学、从头计算方法、蒙特卡罗等;用于分立和集成电路的新材料和工艺;磁性材料和自旋电子学;异质结构和量子器件;半导体的电学和光学性质的工程;晶体生长机理;可靠性、缺陷密度、本征杂质和缺陷。
Inverse spinel NiFe2O4 deposited g-C3N4 nanosheet for enhanced visible light photocatalytic activity
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.04.040
Role of hexamine in ZnO morphologies at different growth temperature with potential application in dye sensitized solar cell
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.03.028
Construction of g-C3N4/ZIF-67 photocatalyst with enhanced photocatalytic CO2 reduction activity
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.02.010
Structural and temperature-dependent optical properties of thermally evaporated CdS thin films
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.01.001
Bidimensional ordered plasmonic nanoarrays for nonlinear optics, nanophotonics and biosensing applications
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.03.025
Ultrafine Bi2WO6 nanoparticles prepared by flame spray pyrolysis for selective acetone gas-sensing
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.10.021
Heterojunction formation on InVO4/N-TiO2 with enhanced visible light photocatalytic activity for reduction of 4-NP
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.09.017
Tuning the wettability and photocatalytic efficiency of heterostructure ZnO-SnO2 composite films with annealing temperature
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.02.009
Effect of calcination temperature on the humidity sensitivity of TiO2/graphene oxide nanocomposites
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.09.019
Synthesis of polyoxometalates, copper molybdate (Cu3Mo2O9) nanopowders, for energy storage applications
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.01.002
Simulation of optimum band structure of HTM-free perovskite solar cells based on ZnO electron transporting layer
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.10.003
Facile synthesis of Fe3+ doped La2CuO4/LaFeO3 perovskite nanocomposites: Structural, optical, magnetic and catalytic properties
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.04.049
Enhancement of adsorption and visible light photocatalytic activity of the Zn2+-doped BiOBr/PVP modified microspheres for RhB
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.10.012
Enhancement of sensitivity and selectivity of α-Fe2O3 nanorod gas sensors by ZnO nanoparticles decoration
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104603
Structural and electrochemical properties of ZrO2 doped PVP-Na+ based nanocomposite polymer films
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.08.030
Dry-co-grinding of doped TiO2 with nitrogen, silicon or selenium for enhanced photocatalytic activity under UV/visible and visible light irradiation for environmental applications
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.10.032
Superior electrochemical water oxidation of novel NiS@FeS2 nanocomposites
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.06.010
Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/j.mssp.2019.01.019
Sol-gel synthesis of nanoporous LaFeO3 powders for solar applications
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104682
Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.12.036
Preparation of SnO2/conjugated polyvinyl alcohol derivative nanohybrid with good performance in visible light-induced photocatalytic reduction of Cr(VI)
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104586
Analysis of two dye-sensitized methods for improving the sunlight absorption of TiO2 using CPC photoreactor at pilot scale
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104640
Hole transport materials doped to absorber film for improving the performance of the perovskite solar cells
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.03.028
Improved coverage of rGO film on Si inverted pyramidal microstructures for enhancing the photovoltaic of rGO/Si heterojunction solar cell
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.02.033
Ecofriendly Mg2Si-based photodiode for short-wavelength IR sensing
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.11.033
Electronic transitions in low dimensional semiconductor structures measured by surface photovoltage spectroscopy
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.05.027
Optical, photocatalytic properties of novel pyro- stannate A2Sn2O7 (A=Ce, Ca, Sr), and Pt deposited (SrCe)2Sn2O7 for the removal of organic pollutants under direct solar light irradiation
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104647
The influence of Ag doping and annealing on phase, structural and carrier transport characteristics of CIS thin films
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.12.024
γ-MPTS-SAM modified meso-TiO2 surface to enhance performance in perovskite solar cell
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.02.018
Self-powered UV detection using SnO2 nanowire arrays with Au Schottky contact
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.05.003
The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104587
Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.10.013
Solution-sheared thin films of a donor-acceptor random copolymer/polystyrene blend as active material in field-effect transistors
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.12.022
Structural and optical characteristics of nickel bis(acetylacetonate) thin films as a buffer layer for optoelectronic applications
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.05.008
CVD diamond film detectors for α particles with a new electrode structure of reduced graphene oxide/Au
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.11.027
Structural and electrical studies on Ti/Al-based Au-free ohmic contact metallization for AlGaN/GaN HEMTs
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.02.038
Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.01.016
Microwave-assisted synthesis of cobalt-manganese oxide for supercapacitor electrodes
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104607
Self-reduction combined with photo-deposition decorating Au nanoparticles on urchin-like WO2.72 for enhancement of trimethylamine-sensing performance
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.05.037
Effect of the AlN interlayer on electroluminescent performance of n-SnO2/p-GaN heterojunction light-emitting diodes
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.12.015
Investigation on structural and optoelectronic properties of in-situ post growth annealed ZnSnN2 thin films
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.09.016
Response surface approach for visible light assisted photocatalytic degradation of ortho nitrophenol by magnetically separable TiO2/CS nanocomposite
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.04.022
Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.11.008
Flexible W-doped In2O3 films grown on ion beam treated polyethylene terephthalate substrate using roll to roll sputtering
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.09.015
Bandgap tuning of Monolayer MoS2(1-x)Se2x alloys by optimizing parameters
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.03.031
Controllable fabrication and field emission properties of cactus-like Cu2-xSe@Cu2-xSe nanowalls via the vertical secondary growth
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.04.044
Forward and reverse current aging of GaN-based light-emitting diodes fabricated with Ag-based reflective electrodes
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.10.005
Preparation conditions and electrical properties of Ti3C2Tx nanosheets
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104683
Ethanol Sensing with Pure and Boric Acid Doped Eectrospun CuInS2 Nanofibers in the Presence of Relative Humidity
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104651
The defect state of Yb-doped ZnO nanoparticles using thermoluminescence study
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.04.030
