Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
半导体加工中的材料科学提供了一个独特的论坛，讨论功能材料和器件的新工艺、应用和理论研究，为（光）电子、传感器、探测器、生物技术和绿色能源。每期的目的是提供目前的见解、新的成就、突破和未来的发展趋势等不同领域的快照，如微电子、能源转换和储存、通信，生物技术、（光）催化、纳米和薄膜技术、混合和复合材料、化学加工、气相沉积、器件制造和建模，这些都是先进半导体加工和应用的支柱。内容包括：用于亚微米器件的先进光刻技术;蚀刻和相关主题;离子注入;损伤演变及相关问题;等离子体和热CVD;快速热处理;先进的金属化和互连方案;薄介电层、氧化;溶胶-凝胶处理;化学浴和（电）化学沉积;化合物半导体加工;新型非氧化物材料及其应用;（大）分子和杂化材料;分子动力学、从头计算方法、蒙特卡罗等;用于分立和集成电路的新材料和工艺;磁性材料和自旋电子学;异质结构和量子器件;半导体的电学和光学性质的工程;晶体生长机理;可靠性、缺陷密度、本征杂质和缺陷。
Inverse spinel NiFe2O4 deposited g-C3N4 nanosheet for enhanced visible light photocatalytic activity
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.04.040
Role of hexamine in ZnO morphologies at different growth temperature with potential application in dye sensitized solar cell
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.03.028
Construction of g-C3N4/ZIF-67 photocatalyst with enhanced photocatalytic CO2 reduction activity
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.02.010
Structural and temperature-dependent optical properties of thermally evaporated CdS thin films
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.01.001
Bidimensional ordered plasmonic nanoarrays for nonlinear optics, nanophotonics and biosensing applications
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.03.025
Ultrafine Bi2WO6 nanoparticles prepared by flame spray pyrolysis for selective acetone gas-sensing
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.10.021
Heterojunction formation on InVO4/N-TiO2 with enhanced visible light photocatalytic activity for reduction of 4-NP
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.09.017
Tuning the wettability and photocatalytic efficiency of heterostructure ZnO-SnO2 composite films with annealing temperature
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.02.009
Effect of calcination temperature on the humidity sensitivity of TiO2/graphene oxide nanocomposites
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.09.019
Synthesis of polyoxometalates, copper molybdate (Cu3Mo2O9) nanopowders, for energy storage applications
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.01.002
Simulation of optimum band structure of HTM-free perovskite solar cells based on ZnO electron transporting layer
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.10.003
Facile synthesis of Fe3+ doped La2CuO4/LaFeO3 perovskite nanocomposites: Structural, optical, magnetic and catalytic properties
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.04.049
Enhancement of adsorption and visible light photocatalytic activity of the Zn2+-doped BiOBr/PVP modified microspheres for RhB
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.10.012
Enhancement of sensitivity and selectivity of α-Fe2O3 nanorod gas sensors by ZnO nanoparticles decoration
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104603
Structural and electrochemical properties of ZrO2 doped PVP-Na+ based nanocomposite polymer films
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.08.030
Dry-co-grinding of doped TiO2 with nitrogen, silicon or selenium for enhanced photocatalytic activity under UV/visible and visible light irradiation for environmental applications
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.10.032
Superior electrochemical water oxidation of novel NiS@FeS2 nanocomposites
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.06.010
Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/j.mssp.2019.01.019
Sol-gel synthesis of nanoporous LaFeO3 powders for solar applications
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104682
Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.12.036
Preparation of SnO2/conjugated polyvinyl alcohol derivative nanohybrid with good performance in visible light-induced photocatalytic reduction of Cr(VI)
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104586
Analysis of two dye-sensitized methods for improving the sunlight absorption of TiO2 using CPC photoreactor at pilot scale
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104640
Hole transport materials doped to absorber film for improving the performance of the perovskite solar cells
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.03.028
Improved coverage of rGO film on Si inverted pyramidal microstructures for enhancing the photovoltaic of rGO/Si heterojunction solar cell
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.02.033
Ecofriendly Mg2Si-based photodiode for short-wavelength IR sensing
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.11.033
Electronic transitions in low dimensional semiconductor structures measured by surface photovoltage spectroscopy
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.05.027
Optical, photocatalytic properties of novel pyro- stannate A2Sn2O7 (A=Ce, Ca, Sr), and Pt deposited (SrCe)2Sn2O7 for the removal of organic pollutants under direct solar light irradiation
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104647
The influence of Ag doping and annealing on phase, structural and carrier transport characteristics of CIS thin films
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.12.024
γ-MPTS-SAM modified meso-TiO2 surface to enhance performance in perovskite solar cell
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.02.018
Self-powered UV detection using SnO2 nanowire arrays with Au Schottky contact
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.05.003
The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104587
Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.10.013
Solution-sheared thin films of a donor-acceptor random copolymer/polystyrene blend as active material in field-effect transistors
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.12.022
Structural and optical characteristics of nickel bis(acetylacetonate) thin films as a buffer layer for optoelectronic applications
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.05.008
CVD diamond film detectors for α particles with a new electrode structure of reduced graphene oxide/Au
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.11.027
Structural and electrical studies on Ti/Al-based Au-free ohmic contact metallization for AlGaN/GaN HEMTs
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.02.038
Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.01.016
Microwave-assisted synthesis of cobalt-manganese oxide for supercapacitor electrodes
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104607
Self-reduction combined with photo-deposition decorating Au nanoparticles on urchin-like WO2.72 for enhancement of trimethylamine-sensing performance
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.05.037
Effect of the AlN interlayer on electroluminescent performance of n-SnO2/p-GaN heterojunction light-emitting diodes
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.12.015
Investigation on structural and optoelectronic properties of in-situ post growth annealed ZnSnN2 thin films
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.09.016
Response surface approach for visible light assisted photocatalytic degradation of ortho nitrophenol by magnetically separable TiO2/CS nanocomposite
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.04.022
Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.11.008
Flexible W-doped In2O3 films grown on ion beam treated polyethylene terephthalate substrate using roll to roll sputtering
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.09.015
Bandgap tuning of Monolayer MoS2(1-x)Se2x alloys by optimizing parameters
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.03.031
Controllable fabrication and field emission properties of cactus-like Cu2-xSe@Cu2-xSe nanowalls via the vertical secondary growth
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.04.044
Forward and reverse current aging of GaN-based light-emitting diodes fabricated with Ag-based reflective electrodes
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2018.10.005
Preparation conditions and electrical properties of Ti3C2Tx nanosheets
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104683
Ethanol Sensing with Pure and Boric Acid Doped Eectrospun CuInS2 Nanofibers in the Presence of Relative Humidity
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.104651
The defect state of Yb-doped ZnO nanoparticles using thermoluminescence study
来源期刊：Materials Science in Semiconductor ProcessingDOI：10.1016/J.MSSP.2019.04.030
