IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
IEEE Transactions on Electron Devices出版有关电子和离子集成电路器件和互连的理论、建模、设计、性能和可靠性的原创性和重要贡献，涉及绝缘体、金属、有机材料、微等离子体、半导体、量子效应结构、真空器件以及在生物电子学、生物医学电子学、计算、通信、显示器微机电、成像、微致动器、纳米电子、光电子、光伏、功率IC和微传感器。还出版了关于这些主题的辅导和评论论文，偶尔还出版专刊，以更深入和更广泛的方式介绍一些特定领域的论文。
Evaluation of Low-Temperature Saturation Velocity in $\\beta$ -(Al x Ga 1–x ) 2 O 3 /Ga 2 O 3 Modulation-Doped Field-Effect Transistors
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2889573
Resistive RAM With Multiple Bits Per Cell: Array-Level Demonstration of 3 Bits Per Cell
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2879788
Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2887270
Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2878787
Convolutional Neural Networks Based on RRAM Devices for Image Recognition and Online Learning Tasks
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2882779
Effective Heat Dissipation of QD-Based WLEDs by Stacking QD Film on Heat-Conducting Phosphor-Sapphire Composite
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2907700
Self-Powered Broadband (UV-NIR) Photodetector Based on 3C-SiC/Si Heterojunction
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2899742
1T-DRAM With Shell-Doped Architecture
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2882556
The Resistivity Size Effect in Epitaxial Nb(001) and Nb(011) Layers
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2924312
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2877905
Modeling of HCD Kinetics for Full ${V}_{{G}}$ / ${V}_{{D}}$ Span in the Presence of NBTI, Electron Trapping, and Self Heating in RMG SiGe p-FinFETs
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2911335
A 3-D TCAD Framework for NBTI, Part-II: Impact of Mechanical Strain, Quantum Effects, and FinFET Dimension Scaling
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2906293
Performance Impacts of Analog ReRAM Non-ideality on Neuromorphic Computing
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2894273
A High-Performance Tunable LED-Compatible Current Regulator Using an Integrated Voltage Nanosensor
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2899756
Research of Single-Event Burnout and Hardening of AlGaN/GaN-Based MISFET
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2887245
A Compact Relativistic Magnetron With Lower Output Mode
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2898446
A Numerical Simulation of C 3 N Nanoribbon-Based Field-Effect Transistors
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2883298
Impact of Sputtering Power on Amorphous In–Al–Zn–O Films and Thin Film Transistors Prepared by RF Magnetron Sputtering
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2906892
Bias Temperature Stress Instability of Multilayered MoS2 Field-Effect Transistors With CYTOP Passivation
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2904338
Enhanced Stability of Sr-Doped Aqueous In2O3 Thin-Film Transistors Under Bias/Illumination/Thermal Stress
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2893479
Study on Impact of Parasitic Capacitance on Performance of Graded Channel Negative Capacitance SOI FET at High Temperature
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2917775
Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2907484
Three-Dimensional Varying Density Field Plate for Lateral Power Devices
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2895234
DIMOHA: A Time-Domain Algorithm for Traveling-Wave Tube Simulations
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2928450
Fundamental Limit to Scaling Si Field-Effect Transistors Due to Source-to-Drain Direct Tunneling
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2894967
Thermal SPICE Modeling of FinFET and BEOL Considering Frequency-Dependent Transient Response, 3-D Heat Flow, Boundary/Alloy Scattering, and Interfacial Thermal Resistance
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2912426
A Proposal for an Electrostatic Doping-Assisted Electroabsorption Modulator for Intrachip Communication
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2906673
Submicrometer Top-Gate Self-Aligned a-IGZO TFTs by Substrate Conformal Imprint Lithography
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2898255
Exploring Cycle-to-Cycle and Device-to-Device Variation Tolerance in MLC Storage-Based Neural Network Training
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2906249
Investigation of Ta2O5 as an Alternative High- ${k}$ Dielectric for InAlN/GaN MOS-HEMT on Si
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2893288
Influence of Fundamental Model Uncertainties on Silicon Solar Cell Efficiency Simulations
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2882776
Spontaneous Degradation of Flexible Poly-Si TFTs Subject to Dynamic Bending Stress
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2907042
TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2881294
Compact Model of Carrier Transport in Monolayer Transition Metal Dichalcogenide Transistors
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2866095
Efficiency Enhancement in Thermally Activated Delayed Fluorescence Organic Light-Emitting Devices by Controlling the Doping Concentration in the Emissive Layer
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2924091
Improving the Properties of L-Ascorbic Acid Biosensor Based on GO/IGZO/Al Using Magnetic Beads
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2901053
Study of Passband and Stopband Properties of Sheet-Beam Folded Waveguide Structures
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2905774
Effect of Active Layer Scaling on the Performance of Ge1–xSnx Phototransistors
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2925892
Solution-Processed Yttrium-Doped IZTO Semiconductors for High-Stability Thin Film Transistor Applications
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2949702
Prediction of Alpha Particle Effect on 5-nm Vertical Field-Effect Transistors
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2873682
Freewheeling Diode Technology With Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2941710
The Impact of Temperature on GaN/Si HEMTs Under RF Operation Using Gate Resistance Thermometry
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2876207
3-D Fast Nonlinear Simulation for Beam–Wave Interaction of Sheet Beam Traveling-Wave Tube
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2889652
The Minimum Specific on-Resistance of Semi-SJ Device
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2881293
Ultrasensitive Charged Object Detection Based on Rubrene Crystal Sensor
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2914353
From Process Corners to Statistical Circuit Design Methodology: Opportunities and Challenges
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2860929
Influences of Diamond Material on Heat Dissipation Capabilities of Helical Slow Wave Structures
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2945969
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2900743
Repair of Oxygen Vacancies and Improvement of HfO2/MoS2 Interface by NH3-Plasma Treatment
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2019.2934186
Parasitic $RC$ Aware Delay Corner Model for Sub-10-nm Logic Circuit Design
来源期刊：IEEE Transactions on Electron DevicesDOI：10.1109/TED.2018.2882773
