IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
IEEE电子器件通讯发表与电子和离子集成电路器件和互连的理论、建模、设计、性能和可靠性相关的原创性和重要贡献，涉及绝缘体、金属、有机材料、微等离子体、半导体、量子效应结构、真空器件以及在生物电子学、生物医学电子学、计算、通信、显示器微机电、成像、微致动器、纳米电子、光电子、光伏、功率IC和微传感器。
Current Aperture Vertical $\\beta$ -Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2018.2884542
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2900154
Low Power Restricted Boltzmann Machine Using Mixed-Mode Magneto-Tunneling Junctions
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2018.2889881
Proposal of Toggle Spin Torques Magnetic RAM for Ultrafast Computing
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2907063
Incomplete Dipoles Flipping Produced Near Hysteresis-Free Negative Capacitance Transistors
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2018.2886426
Graphene Field-Effect Transistors With High Extrinsic ${f}_{T}$ and ${f}_{\\mathrm{{max}}}$
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2018.2884054
Normally-Off Ga2O3 MOSFETs With Unintentionally Nitrogen-Doped Channel Layer Grown by Plasma-Assisted Molecular Beam Epitaxy
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2919251
Solution-Processed Physically Transient Resistive Memory Based on Magnesium Oxide
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2018.2886380
ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2915555
An Offset Readout Current Sensing Scheme for One-Resistor RRAM-Based Cross-Point Array
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2018.2886552
Experimental Verification of the Low Transmission Loss of a Flat-Roofed Sine Waveguide Slow-Wave Structure
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2904080
A Novel Multi-Source Micro Power Generator for Harvesting Thermal and Optical Energy
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2018.2889300
Study on 4H-SiC GGNMOS Based ESD Protection Circuit With Low Trigger Voltage Using Gate-Body Floating Technique for 70-V Applications
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2018.2885846
The Super-Lattice Castellated Field-Effect Transistor: A High-Power, High-Performance RF Amplifier
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2917285
Color Converted White Light-Emitting Diodes With 637.6 MHz Modulation Bandwidth
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2018.2884934
Impact of Dopant Aggregation on the EL of Blue Fluorescent Host-Dopant Emitters
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2908194
Improved Electrical Characteristics of Bulk FinFETs With SiGe Super-Lattice-Like Buried Channel
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2018.2890535
Enhancement-Mode $\\beta$ -Ga2O3 Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2908948
Low-Frequency Noise Characteristics in Multilayer MoTe2 FETs With Hydrophobic Amorphous Fluoropolymers
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2018.2889904
A High-Performance Pd Nanoparticle (NP)/WO3 Thin-Film-Based Hydrogen Sensor
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2915537
Transparent Capacitive-Type Fingerprint Sensing Based on Zinc Oxide Thin-Film Transistors
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2895830
Low Subthreshold Swing Double-Gate $\\beta$ -Ga2O3 Field-Effect Transistors With Polycrystalline Hafnium Oxide Dielectrics
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2924680
Ionizing Radiation Effect on Memory Characteristics for HfO2-Based Ferroelectric Field-Effect Transistors
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2931826
3D MEMS In-Chip Solenoid Inductor With High Inductance Density for Power MEMS Device
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2941003
Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2936104
RF MEMS In-Line Type Phase Detector With Large Dynamic Range
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2904340
Implementation of Self-Aligned Top-Gate Amorphous Zinc Tin Oxide Thin-Film Transistors
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2910462
Large-Signal Model of the Metal–Insulator–Graphene Diode Targeting RF Applications
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2911116
Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2950916
High-Performance Broadband Photo-Detection in Solution-Processed ZnO-ZnCr2O4 Nanowalls
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2916628
Right-Angle Black Phosphorus Tunneling Field Effect Transistor
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2946763
An Accurate Analytical Model for Tunnel FET Output Characteristics
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2914014
Large Variation in Temperature Dependence of Band-to-Band Tunneling Current in Tunnel Devices
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2939668
Monolithically Integrated GaN LED/Quasi-Vertical Power U-Shaped Trench-Gate MOSFET Pairs Using Selective Epi Removal
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2943911
Uniform Insulating Properties of Low-Temperature Curable Gate Dielectric for Organic Thin-Film Transistor Arrays on Plastic Substrate
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2018.2880320
Mechanism and Novel Structure for di/dt Controllability in U-Shaped Channel Silicon-on-Insulator Lateral IGBTs
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2937399
High-Temperature Cycle Durability of Superplastic Al–Zn Eutectoid Solder Joints With Stress Relaxation Characteristics for SiC Power Semiconductor Devices
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2018.2884698
A Novel Negative Capacitance Tunnel FET With Improved Subthreshold Swing and Nearly Non-Hysteresis Through Hybrid Modulation
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2909410
Enhanced Performance of Green Perovskite Quantum Dots Light-Emitting Diode Based on Co-Doped Polymers as Hole Transport Layer
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2932134
Triple Gate Polycrystalline-Silicon-Based Ion-Sensitive Field-Effect Transistor for High-Performance Aqueous Chemical Application
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2018.2890741
Realization of Storage and Synaptic Simulation Behaviors Based on Different Forming Modes
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2922996
Performance Potential of 2D Kagome Lattice Interconnects
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2947285
La théologie protestante de Karl Barth comme arrière-plan d’une « théologie existentielle » chez Denis de Rougemont
来源期刊：IEEE Electron Device LettersDOI：10.4000/edl.1904
Les antiquités de Russie méridionale au Louvre et la collection Messaksoudy
来源期刊：IEEE Electron Device LettersDOI：10.4000/edl.1670
Trilogie de la personne. La pensée philosophique et l’engagement politique de Denis de Rougemont
来源期刊：IEEE Electron Device LettersDOI：10.4000/edl.1889
Energy-Storing Hybrid 3D Vertical Memory Structure
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2936253
La responsabilité sociale de l’écrivain. Denis de Rougemont et le PEN Club dans les années 1970
来源期刊：IEEE Electron Device LettersDOI：10.4000/edl.1848
Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2899630
Physics-Guided Neural Modeling for Low-Dimensional Thermoelectric Module
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2944395
High Field Effect Mobility, Amorphous In-Ga-Sn-O Thin-Film Transistor With No Effect of Negative Bias Illumination Stress
来源期刊：IEEE Electron Device LettersDOI：10.1109/LED.2019.2931089
