IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
IEEE T SEMICONDUCT M
影响因子:2.3
是否综述期刊:
是否预警:不在预警名单内
是否OA:
出版国家/地区:UNITED STATES
出版社:Institute of Electrical and Electronics Engineers Inc.
发刊时间:0
发刊频率:Quarterly
收录数据库:SCIE/Scopus收录
ISSN:0894-6507

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期刊介绍
The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.
IEEE半导体制造会刊解决了制造复杂微电子元件,特别是超大规模集成电路(VLSI)的挑战性问题。制造这些产品需要精确的微图案化、精确控制材料特性、超洁净的工作环境以及化学、物理、电气和机械工艺的复杂相互作用。
年发文量 72
国人发稿量 9.36
国人发文占比 0.13%
自引率 -
平均录取率0
平均审稿周期 平均6.0个月
版面费 US$2195
偏重研究方向 工程技术-工程:电子与电气
期刊官网 http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=66
投稿链接 http://mc.manuscriptcentral.com/tsm-ieee
期刊高被引文献
Convolutional Neural Network for Wafer Surface Defect Classification and the Detection of Unknown Defect Class
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2902657
A Voting Ensemble Classifier for Wafer Map Defect Patterns Identification in Semiconductor Manufacturing
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2904306
AdaBalGAN: An Improved Generative Adversarial Network With Imbalanced Learning for Wafer Defective Pattern Recognition
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2925361
A Novel DBSCAN-Based Defect Pattern Detection and Classification Framework for Wafer Bin Map
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2916835
Improved Normalized Cross-Correlation for Defect Detection in Printed-Circuit Boards
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2911062
Fault Detection Strategy Based on Weighted Distance of $k$ Nearest Neighbors for Semiconductor Manufacturing Processes
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2018.2857818
Nanoscale Metrology of Line Patterns on Semiconductor by Continuous Wave Terahertz Multispectral Reconstructive 3-D Imaging Overcoming the Abbe Diffraction Limit
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2018.2865167
Enhanced Stacked Denoising Autoencoder-Based Feature Learning for Recognition of Wafer Map Defects
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2940334
Feature Extraction From Analog Wafermaps: A Comparison of Classical Image Processing and a Deep Generative Model
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2911061
Wafer Defect Pattern Recognition and Analysis Based on Convolutional Neural Network
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2937793
Denoised Residual Trace Analysis for Monitoring Semiconductor Process Faults
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2916374
The Design and Implementation of an Embedded Real-Time Automated IC Marking Inspection System
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2018.2875920
Development of Novel Solar Cell Micro Crack Detection Technique
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2921951
CMOS-Compatible MESFETs for High Power RF Integrated Circuits
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2018.2867449
Statistical Process Control for Monitoring the Particles With Excess Zero Counts in Semiconductor Manufacturing
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2018.2882862
A Wafer Map Yield Prediction Based on Machine Learning for Productivity Enhancement
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2945482
A Condition Change Detection Method for Solar Conversion Efficiency in Solar Cell Manufacturing Processes
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2018.2875011
A 0.18- $\\mu$ m LDMOS With Excellent Ronsp and Uniformity by Optimized Manufacture Process
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2018.2879215
A Novel Method for Deposit Accumulation Assessment in Dry Etching Chamber
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2904889
Sub-Resolution Assist Feature Cleanup Based on Grayscale Map
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2928878
Strategies for Reducing Particle Defects in Ti and TiN Thin-Film Deposition Processes
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2018.2876463
Mechanism and Control Technique of Wafer Warpage in Process Integration for Trench Field Plate Power MOSFET
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2937391
Displaying Data Effectively Using an Automated Process Dashboard
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2938157
Advanced Process Control Using Virtual Metrology to Cope With Etcher Condition Change
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2938546
Marker Layout for Optimizing the Overlay Alignment in a Photolithography Process
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2907790
Modeling Spin Coating Over Topography and Uniformity Improvements Through Fill Patterns for Advanced Packaging Technologies
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2018.2870712
Virtual Metrology Model Robustness Against Chamber Condition Variation Using Deep Learning
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2931328
Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2932272
Novel Volatile Film for the Protection of Organo-Silicate Glass Dielectric Materials
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2941323
Photoluminescence Imaging for Buried Defects Detection in Silicon: Assessment and Use-Cases
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2018.2871967
A Productivity-Oriented Wafer Map Optimization Using Yield Model Based on Machine Learning
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2018.2870253
${K}$ -Cyclic Schedules and the Worst-Case Wafer Delay in a Dual-Armed Cluster Tool
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2910399
Guest Editorial Special Section on the 2018 International Symposium on Semiconductor Manufacturing
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/tsm.2019.2945222
Research Into the LSTM Neural Network-Based Crystal Growth Process Model Identification
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2906651
Modelling and Control of Backside-Induced ESD Defects During Wet-Chemical Processes in GaAs Front End Manufacturing
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2933013
Characterization of Electroless Nickel Plated Materials During High Temperature Solder Processing
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2945517
Bessel Decomposition of Temperature Profiles in Film Deposition Reactors
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2018.2866343
Incorporating Virtual Metrology Into Failure Prediction
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2932377
The Long Journey From Standardization to Fully Fab Automation and More
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2945352
Characterization of New Method for CMP Dresser to Saving Ultrapure Water Consumption
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2891737
Gross Die Per Wafer and Yield Optimization for GaAs ICs With Sub-Micron Features
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2943399
Scribe Line Defect-Induced Yield Loss in FINFET Technology
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2942268
Spatial Correlated Data Monitoring in Semiconductor Manufacturing Using Gaussian Process Model
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2018.2883763
A Comprehensive Investigation of Depth Filter Functionality for a Colloidal Silica Slurry Used for Semiconductor Manufacturing Process
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2018.2876342
Special Section on the 2017 SEMI Advanced Semiconductor Manufacturing Conference
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2891031
Editorial 2018 Best Paper Award
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2910984
Fluid Dynamic Modeling and Flow Visualization of an Industrial Wet Chemical Process Bath
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2917083
Design and Development of InP DHBTs With High Breakdown Voltage for Ka-Band PA Applications
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2932962
In-Line Metrology for Characterization and Control of Extreme Wafer Thinning of Bonded Wafers
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2018.2885577
Modeling and Controlling Layout Dependent Variations in Semi-Additive Copper Electrochemical Plating
来源期刊:IEEE Transactions on Semiconductor ManufacturingDOI:10.1109/TSM.2019.2941439
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时间 预警情况
2023年01月发布的2023版不在预警名单中
2021年12月发布的2021版不在预警名单中
2021年01月发布的2020版不在预警名单中
*来源:中科院《 国际期刊预警名单》
JCR分区 WOS分区等级:Q3区
版本 按学科 分区
WOS期刊SCI分区
WOS期刊SCI分区
WOS期刊SCI分区是指SCI官方(Web of Science)为每个学科内的期刊按照IF数值排 序,将期刊按照四等分的方法划分的Q1-Q4等级,Q1代表质量最高,即常说的1区期刊。
(2024-2025年最新版)
PHYSICS, APPLIED
Q2
PHYSICS, CONDENSED MATTER
Q3
ENGINEERING, MANUFACTURING
Q3
ENGINEERING, ELECTRICAL & ELECTRONIC
Q3
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版本 大类学科 小类学科 Top期刊 综述期刊
2023年12月最新升级版
工程技术4区
PHYSICS, APPLIED
物理:应用
4区
ENGINEERING, MANUFACTURING
工程:制造
4区
PHYSICS, CONDENSED MATTER
物理:凝聚态物理
3区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
4区
2022年12月升级版
工程技术3区
PHYSICS, APPLIED
物理:应用
3区
ENGINEERING, MANUFACTURING
工程:制造
4区
PHYSICS, CONDENSED MATTER
物理:凝聚态物理
3区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
3区
2021年12月基础版
工程技术3区
PHYSICS, APPLIED
物理:应用
4区
ENGINEERING, MANUFACTURING
工程:制造
4区
PHYSICS, CONDENSED MATTER
物理:凝聚态物理
3区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
4区
2021年12月升级版
工程技术4区
PHYSICS, APPLIED
物理:应用
4区
ENGINEERING, MANUFACTURING
工程:制造
4区
PHYSICS, CONDENSED MATTER
物理:凝聚态物理
4区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
4区
2020年12月旧升级版
工程技术3区
PHYSICS, APPLIED
物理:应用
3区
ENGINEERING, MANUFACTURING
工程:制造
4区
PHYSICS, CONDENSED MATTER
物理:凝聚态物理
3区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
4区