The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
本出版物的范围包括但不限于以下内容的可靠性：器件、材料、工艺、接口、集成微系统（包括MEMS和传感器）、晶体管、技术（CMOS、BiCMOS等）集成电路（IC、SSI、MSI、LSI、ULSI、ELSI等），薄膜晶体管应用。从概念阶段到研发阶段再到生产规模扩大，每个阶段对此类实体可靠性的测量和理解，为产品成功上市提供了关于器械、材料、工艺、包装和其他必需品可靠性的整体数据库。该可靠性数据库是确保产品质量、满足客户期望的基础。这样开发的产品具有高可靠性。由于产品缺陷已被发现（根本原因分析）并设计出最终产品，因此将实现高质量。这种不断提高可靠性和质量的过程将产生一个上级的产品。最后，可靠性和质量不是一回事;而且在某种意义上，可以或必须做的每件事都能保证产品在客户条件下在现场成功地运行。我们的目标是抓住这些进步。另一个目标是将交叉交流的重点放在电子材料和器件可靠性的最新技术水平上，并提供对影响可靠性的基本现象的基本理解。此外，该出版物是可靠性跨学科研究的论坛。总体目标是提供前沿/最先进的信息，这与可靠产品的创建密切相关。
A First-Principles Study of the SF6 Decomposed Products Adsorbed Over Defective WS2 Monolayer as Promising Gas Sensing Device
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2919773
A Compact and Self-Isolated Dual-Directional Silicon Controlled Rectifier (SCR) for ESD Applications
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2895208
Novel Photovoltaic Micro Crack Detection Technique
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2907019
High Thermal Performance and Reliability of Quantum-Dot-Based Light-Emitting Diodes With Watt-Level Injection Power
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2018.2886299
Performance Monitor Counters: Interplay Between Safety and Security in Complex Cyber-Physical Systems
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2898882
Life Model of the Electrochemical Migration Failure of Printed Circuit Boards Under NaCl Solution
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2938010
Adaptive Body Biasing Circuit for Reliability and Variability Compensation of a Low Power RF Amplifier
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2899399
LUT’s Sliding Backup
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2898724
Online Estimation of the Junction Temperature Based on the Gate Pre-Threshold Voltage in High-Power IGBT Modules
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2923457
New Worst-Case Timing for Standard Cells Under Aging Effects
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2893017
IGBT Junction Temperature Measurements: Inclusive of Dynamic Thermal Parameters
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2910182
Modeling and Analysis of Electro-Thermal Impact of Crosstalk Induced Gate Oxide Reliability in Pristine and Intercalation Doped MLGNR Interconnects
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2933035
Multilevel Redundancy Allocation for SEU Mitigation of DSP Codes Based on OMA
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2899611
New Insights on Device Level TDDB at GHz Speed in Advanced CMOS Nodes
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/IIRW.2018.8727076
Mixed-Mode Stress in Silicon–Germanium Heterostructure Bipolar Transistors: Insights From Experiments and Simulations
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2912853
Reduced-Code Static Linearity Test of Split-Capacitor SAR ADCs Using an Embedded Incremental $\\Sigma\\Delta$ Converter
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2891298
The Impact of the Electrode Performance on the Endurance Properties of the Phase Change Memory Device
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2893770
Evaluation of Three-Point Bending Strength of Thin Silicon Die With a Consideration of Geometric Nonlinearity
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2937988
Synchrotron X-Ray Microdiffraction Investigation of Scaling Effects on Reliability for Through-Silicon Vias for 3-D Integration
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2933794
The Estimation of the Lifetime Variation for Power Devices
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2940672
Photovoltaic Hot-Spots Fault Detection Algorithm Using Fuzzy Systems
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2944793
Thermal Management for Portable Electronics Using a Piezoelectric Micro-Blower
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2933021
Investigation of Hot-Carrier Degradation in 0.18- $\\mu$ m MOSFETs for the Evaluation of Device Lifetime and Digital Circuit Performance
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2938319
Hybrid-Organic-Photodetector Containing Chemically Treated ZnMgO Layer With Promising and Reliable Detectivity, Responsivity and Low Dark Current
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2895668
Dynamic Voltage Overshoot During Triggering of an SCR-Type ESD Protection
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2952713
Area-Efficient On-Chip Transient Detection Circuit for System-Level ESD Protection Against Transient-Induced Malfunction
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2910351
The Competing Aging Effects on SRAM Operating Life Tests
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2916481
Analytical Model for RDF-Induced Threshold Voltage Fluctuations in Double-Gate MOSFET
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2910197
Evaluation of Radiation Resiliency on Emerging Junctionless/Dopingless Devices and Circuits
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2949064
Development of a Microvia Fatigue Life Model Using a Response Surface Method
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2898179
Observation of Plasma-Induced Damage in Bulk Germanium ${p}$ -Type FinFET Devices and Curing in High-Pressure Anneal
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2906997
Low-Cost Digital Test Solution for Symbol Error Detection of RF ZigBee Transmitters
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2898769
Power Module Interconnection Reliability in BTS Applications
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2920316
Device Screening Strategy for Balancing Short-Circuit Behavior of Paralleling Silicon Carbide MOSFETs
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2949449
P-Edge NMOSFET for Improving TID Tolerance
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2891268
Design of VT-Sensitive Ring Oscillators for Monitoring Gate-TDDB Environmental Stress
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2018.2886566
HealthLog Monitor: Errors, Symptoms and Reactions Consolidated
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2892206
Identifying the Traps in the Channel Region in GaN-Based HEMTs Using a Nonmonotone Drain Current Transient
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2923107
Time Integration Damage Model for Sn3.5Ag Solder Interconnect in Power Electronic Module
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2891949
Tensile-Fatigue Behavior of Sintered Copper Die-Attach Material
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2916784
Reliability of High-Voltage GaN-Based Light-Emitting Diodes
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2917005
Design Rules for TSV Membranes
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2923669
Guest Editorial Robust System Design: IEEE International On-Line Testing and Robust System Design Symposium (IOLTS) 2018
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2898735
Reliability Characterization and Modeling of High Speed Ge Photodetectors
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2945996
Fault-Independent Test-Generation for Software-Based Self-Testing
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/iolts.2018.8474081
Impact of Electrical Stress on $\\gamma$ Ray Irradiated Double Polysilicon Self-Aligned (DPSA) PNP Bipolar Transistors
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2923170
On Thermal Acceleration of Medical Device Polymer Aging
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2907080
Comparative Study on the Transients Induced by Single Event Effect and Space Electrostatic Discharge
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2950929
Investigation of Electrical Characteristics Dependency of Roll-to-Roll Printed Solar Cells With Silver Electrodes on Mechanical Tensile Strain
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2949116
Modeling Tool for Capacitive RF MEMS Operating Bias Voltage Optimization
来源期刊：IEEE Transactions on Device and Materials ReliabilityDOI：10.1109/TDMR.2019.2935340
