Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 h
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/2/022801
Optical and electrical properties of two-dimensional anisotropic materials
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/6/061001
A review of the most recent progresses of state-of-art gallium oxide power devices
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/1/011803
Recent advances in lithographic fabrication of micro-/nanostructured polydimethylsiloxanes and their soft electronic applications
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/11/111605
Temperature-dependent electrical properties of β-Ga 2 O 3 Schottky barrier diodes on highly doped single-crystal substrates
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/1/012801
Telecom wavelength single photon sources
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/7/071901
Realizing super-long Cu 2 O nanowires arrays for high-efficient water splitting applications with a convenient approach
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/5/052701
Large-scale, adhesive-free and omnidirectional 3D nanocone anti-reflection films for high performance photovoltaics
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/4/042601
Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/12/121801
Screen-printed soft triboelectric nanogenerator with porous PDMS and stretchable PEDOT:PSS electrode
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/11/112601
Stable single photon sources in the near C-band range above 400 K
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/7/072902
Lattice vibration and Raman scattering of two-dimensional van der Waals heterostructure
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/9/091001
Perspectives on exfoliated two-dimensional spintronics
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/8/081508
Smart gas sensor arrays powered by artificial intelligence
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/11/111601
Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/2/022804
Applications of Huang–Rhys theory in semiconductor optical spectroscopy
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/9/091102
Recent progress of the optoelectronic properties of 2D Ruddlesden-Popper perovskites
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/4/041901
Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/5/052801
III–V compounds as single photon emitters
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/7/071906
Precision photonic integration for future large-scale photonic integrated circuits
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/5/050301
Structural and optical studies on PVA capped SnS films grown by chemical bath deposition for solar cell application
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/5/052101
Mobility impact on compensation performance of AMOLED pixel circuit using IGZO TFTs
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/2/022403
Remembering John Bardeen: inventor of transistor
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/2/020301
Bilayer tellurene–metal interfaces
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/6/062003
Photoluminescence properties of ultrathin CsPbCl 3 nanowires on mica substrate
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/5/052201
Improvement of tunnel compensated quantum well infrared detector
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/12/122902
High performance active image sensor pixel design with circular structure oxide TFT
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/2/022402
High-performance RF Switch in 0.13 μm RF SOI process
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/2/022401
The predicaments and expectations in development of magnetic semiconductors
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/8/081501
Second generation fully differential current conveyor based analog circuits
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/4/042401
Hydride vapor phase epitaxy for gallium nitride substrate
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/10/101801
Recent progress of SiC UV single photon counting avalanche photodiodes
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/12/121802
Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH 3 plasma pretreatment
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/1/012806
Magneto-transport properties of the off-stoichiometric Co 2 MnAl film epitaxially grown on GaAs (001)
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/5/052501
Two-dimensional ferromagnetic materials and related van der Waals heterostructures: a first-principle study
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/8/081509
One-pot preparation and applications of self-healing, self-adhesive PAA-PDMS elastomers
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/11/112602
Giant modulation of magnetism in (Ga,Mn)As ultrathin films via electric field
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/9/092501
Preparation and application of carbon nanotubes flexible sensors
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/11/111606
Simulation and application of external quantum efficiency of solar cells based on spectroscopy
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/12/122701
Improved efficiency and photo-stability of methylamine-free perovskite solar cells via cadmium doping
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/12/122201
Electronic band structures and optical properties of atomically thin AuSe: first-principle calculations
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/6/062004
Design and analysis of a NMOS triggered LIGBT structure for electrostatic discharge protection
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/5/052402
Hot electron effects on the operation of potential well barrier diodes
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/12/122101
Analytical model for the effects of the variation of ferrolectric material parameters on the minimum subthreshold swing in negative capacitance capacitor
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/12/122401
Bandgap engineered novel g-C3N4/G/h-BN heterostructure for electronic applications
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/3/032801
A novel design approach of charge plasma tunnel FET for radio frequency applications
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/5/052901
Progress on microscopic properties of diluted magnetic semiconductors by NMR and μ SR
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/8/081506
Major scientific accomplishments of Prof. Kun Huang
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/9/090301
Research for radiation-hardened high-voltage SOI LDMOS
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/5/052401
Quantum light source devices of In(Ga)As semiconductorself-assembled quantum dots
来源期刊：Journal of SemiconductorsDOI：10.1088/1674-4926/40/7/071902
