The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices.JSS has five topical interest areas:carbon nanostructures and devicesdielectric science and materialselectronic materials and processingelectronic and photonic devices and systemsluminescence and display materials, devices and processing.
ECS固体科学与技术杂志（JSS）于2012年推出，发表了涵盖固体科学与技术基础和应用领域的杰出研究，包括材料和器件的化学和物理的实验和理论方面。JSS有五个主题领域：碳纳米结构和器件介电科学和材料电子材料和加工电子和光子器件和系统发光和显示材料、器件和加工。
Electrical Properties, Deep Levels and Luminescence Related to Fe in Bulk Semi-Insulating β-Ga2O3 Doped with Fe
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0171907JSS
Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga2O3Rectifiers
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0211907JSS
Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0191903JSS
Thermal Simulations of High Current β-Ga2O3 Schottky Rectifiers
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0361907JSS
Switching behavior and forward bias degradation of 700V, 0.2a, β-Ga2O3 vertical geometry rectifiers
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0061907JSS
60Co gamma ray damage in homoepitaxial β-Ga2O3 Schottky rectifiers
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0091907JSS
Electronic Properties of Ga2O3 Polymorphs
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0331907JSS
Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga2O3
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0271907JSS
Influence of Post-Annealing on Properties of α-Ga2O3 Epilayer Grown by Halide Vapor Phase Epitaxy
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0051907JSS
A Breakthrough Method for the Effective Conditioning of PVA Brush Used for Post-CMP Process
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0111906JSS
Comparison of Dual-Stack Dielectric Field Plates on β-Ga2O3 Schottky Rectifiers
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0391907JSS
First Principles Study of the Ambipolarity in a Germanene Nanoribbon Tunneling Field Effect Transistor
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0021912jss
Valence and Conduction Band Offsets for InN and III-Nitride Ternary Alloys on (−201) Bulk β-Ga2O3
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0281907JSS
Low-frequency noise assessment of work function engineering cap layers in high-k gate stacks
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0221902JSS
Correlating Coefficient of Friction and Shear Force to Platen Motor Current in Tungsten and Interlayer Dielectric Chemical Mechanical Planarization at Highly Non-Steady-State Conditions
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0251910jss
Influence of Oxygen Pressure on Growth of Si-Doped β-(AlxGa1 − x)2O3 Thin Films on c-Sapphire Substrates by Pulsed Laser Deposition
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0411907JSS
Communication—formation of a superconducting MgB2-containing coating on niobium by plasma electrolytic oxidation
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0071903JSS
Insights into tungsten chemical mechanical planarization: Part II. Effect of pad surface micro-texture on frictional, thermal and kinetic aspects of the process
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0251905JSS
A Water Polishing Process to Improve Ceria Abrasive Removal
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0171908JSS
Implementation of a 900 V Switching Circuit for High Breakdown Voltage beta-Ga2O3 Schottky Diodes
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0421907JSS
Optimization of Edge Termination Techniques for β-Ga2O3 Schottky Rectifiers
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0141912jss
Role of Ammonium Ions in Colloidal Silica Slurries for Ru CMP
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0171904JSS
Red Light-Emitting Electrochemical Cells Employing Pyridazine-Bridged Cationic Diiridium Complexes
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0161906JSS
Solution-Processed Semitransparent Inverted Organic Solar Cells from a Transparent Conductive Polymer Electrode
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0231902JSS
The effect of oxygen partial pressure and annealing process on the characteristics of ZnGa2O4 MSM UV photodetector
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0371907JSS
Defect Characterization of Multicycle Rapid Thermal Annealing Processed p-GaN for Vertical Power Devices
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0011902JSS
Ultra-Rapid Determination of Material Removal Rates Based Solely on Tribological Data in Chemical Mechanical Planarization
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0061905JSS
Effect of Annealing on the Band Alignment of ALD SiO2 on (AlxGa1-x)2O3 for x = 0.2 - 0.65
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0251911jss
Annealing Induced Interfacial Evolution of Titanium/Gold Metallization on Unintentionally Doped Beta-Ga2O3
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0321907JSS
On the Impact of Strained PECVD Oxide Layers on Oxide Precipitation in Silicon
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0141904JSS
Frequency-Dependent Impedance Responses of ZnO Using UV Light
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0041901JSS
Selective scattering of blue and red light based on silver and gold nanocubes
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0131903JSS
Characteristics of Slurry Recycling in Chemical Mechanical Polishing (CMP) of Fused Silica (FS)
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0121903JSS
Etch Damages of Ovonic Threshold Switch (OTS) Material by Halogen Gas Based-Inductively Coupled Plasmas
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0051906JSS
Investigation of a Standard Particle Deposition System on Wafer Surface and Its Application to Wafer Cleaning
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0081912jss
Modulation of Electrical Conductivity and Lattice Distortions in Bulk HVPE-Grown GaN
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0041908JSS
Effect of Controlling Abrasive Size in Slurry for Tungsten Contact CMP Process
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0311905JSS
Evaluation of Size Distribution Measurement Methods for Sub-100 nm Colloidal Silica Nanoparticles and Its Application to CMP Slurry
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0261905JSS
On the Impact of Strained PECVD Nitride Layers on Oxide Precipitate Nucleation in Silicon
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0061909JSS
Effects of hydrogen plasma treatment condition on electrical properties of β-Ga2O3
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0041911jss
Optimizing GaxOy Growth Tendency of 3D Structures on Different Substrates through the MOCVD Technique
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0451907JSS
Porous Silicon Based Rugate Filter Wheel for Multispectral Imaging Applications
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0251902JSS
Post-CMP Cleaning of InGaAs Surface for the Removal of Nanoparticle Contaminants for Sub-10nm Device Applications
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0051905JSS
Micro-Opto-Electro-Mechanical Device Based on Flexible β-Ga2O3 Micro-Lamellas
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0441907JSS
Review—Beyond the highs and lows: A perspective on the future of dielectrics research for nanoelectronic devices
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0161910jss
A Wafer-Scale Material Removal Rate Model for Chemical Mechanical Planarization
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2162-8777/ABADEA
Fabrication of Micro-Sized Copper Columns Using Localized Electrochemical Deposition with a 20 μm Diameter Micro Anode
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0111903JSS
Annealing of proton and alpha particle damage in Au-W/β-Ga2O3 rectifiers
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0231912jss
Effect of low temperature RF plasma treatment on electrical properties of junctionless InGaAs MOSFETs
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0181902JSS
Communication—Screen-Printed Silver Electrodes for Enhanced Performance in Light-Emitting Devices Based on Electrochemiluminescence
来源期刊：ECS Journal of Solid State Science and TechnologyDOI：10.1149/2.0101911jss
